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AOT5N60 600V, 5A N-Channel MOSFET formerly engineering part number AOT9604 General Description The AOT5N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150C ID = 5A RDS(ON) < 1.8 (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! Top View TO-220 D G G D S S Absolute Maximum Ratings TA=25C unless otherwise noted Maximum Parameter Symbol VDS Drain-Source Voltage 600 VGS Gate-Source Voltage 30 Continuous Drain B Current Pulsed Drain Current Avalanche Current C C G C Units V V A A mJ mJ V/ns W W/ C C C o TC=25C TC=100C ID IDM IAR EAR EAS dV/dt PD TJ, TSTG TL Symbol RJA RCS RJC Typical 54 0.76 5 3.2 16 2.6 100 200 5 132 1.05 -50 to 150 300 Maximum 65 0.5 0.95 Repetitive avalanche energy Single pulsed avalanche energy Peak diode recovery dv/dt TC=25C B o Power Dissipation Derate above 25 C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Case-to-Sink D,F Maximum Junction-to-Case A A Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT5N60 Electrical Characteristics (T J=25C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS BVDSS /TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance ID=250A, VGS=0V, TJ=25C ID=250A, VGS=0V, TJ=150C ID=250A, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125C VDS=0V, VGS=30V VDS=VGS, ID=250A VGS=10V, ID=2.5A VDS=40V, ID=2.5A 3 3.9 1.44 7.7 0.76 1 5 16 466 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 46 4.2 2.9 583 58.4 5.3 3.7 16.8 VGS=10V, VDS=480V, ID=5A 3.1 8.5 21 VGS=10V, VDS=300V, ID=5A, RG=25 IF=5A,dI/dt=100A/s,VDS=100V 44 35 37 208 2 700 70 6.5 5.6 20 4 11 25 55 45 45 250 2.4 600 700 0.65 1 10 100 5 1.8 V V V/ C A nA V S V A A pF pF pF nC nC nC ns ns ns ns ns C o Parameter Conditions Min Typ Max Units Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/s,VDS=100V A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. G. L=60mH, IAS=2.6A, VDD=50V, RG=25, Starting TJ=25C Rev 0. July 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT5N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10V 8 6 ID (A) 4 2 0 0 5 10 15 20 25 30 VDS (Volts) Fig 1: On-Region Characteristics 3.0 Normalized On-Resistance 3 2.5 2 1.5 1 0.5 0 -100 VGS=10V ID=2A VGS=5.5V 6V ID(A) 6.5V 10 125C 100 VDS=40V -55C 1 25C 0.1 2 4 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 2.5 RDS(ON) (m) VGS=10V 2.0 1.5 1.0 0 2 4 6 8 10 12 -50 0 50 100 150 200 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 125C 1.0E+00 1.0E-01 1.0E-02 25C BVDSS (Normalized) 1.1 IS (A) 1 0.9 1.0E-03 1.0E-04 -50 0 50 100 150 200 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 0.8 -100 TJ (oC) Figure 5: Break Down vs. Junction Temperature Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT5N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 VDS=480V ID=5A Capacitance (pF) 1000 Ciss 10000 12 VGS (Volts) 9 100 Coss 6 3 10 Crss 0 0 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 25 1 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 1 100 100 6 RDS(ON) limited 10s Current rating ID(A) 5 4 3 2 1 0 10 ID (Amps) 1m 1 100s TJ(Max)=150C TC=25C 1 10 VDS (Volts) 100 0.1 10ms 0.1s DC 0.01 1000 0 25 50 75 100 125 150 Figure 9: Maximum Forward Biased Safe Operating Area for AOT5N60 (Note F) 10 ZJC Normalized Transient Thermal Resistance TCASE (C) Figure 10: Current De-rating (Note B) D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=0.95C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Single Pulse Ton T 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT5N60 (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT5N60 Gate Charge Test Circuit & Waveform Vgs Qg + VD C 10V DUT Vgs Ig + VDC Vds Qgs Q gd - Charge Res istive Switching Test Circuit & Waveforms R L Vds Vds Vgs Rg Vgs DU T + VD C 90% Vdd 10% Vgs t d(o n) tr t on t d(off) t off tf Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L Vds Id Vgs Rg DU T Vgs Vgs Vgs Vds EAR 1/2 LI = 2 AR BVDSS + VDC Vdd - Id I AR Diode Recovery Test Circuit & Waveforms Vds + DUT Vgs Qrr = - Idt Vds Vgs Ig Isd L Isd IF + VD C dI/dt IRM trr Vdd Vds - Vdd Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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